Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
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چکیده
منابع مشابه
Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5μm
Articles you may be interested in Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness We have studied the temperature dependence of the photoluminescence of a single layer of InAs/ InP(001) self-assembled quantum wires emitting at 1.5 lm. The non-radiative mechanisms responsible for the quenching of the emission band have been identified. The exciton dynamic...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2008
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.2963703